Important MCQs on PN Junction diode
In this post, mcqs on semiconductor are given. It includes intrinsic semiconductor, extrinsic semiconductor, atoms of semiconductor, trivalent impurities, pentavalent impurities, minority charge carriers, majority charge carriers, potential barrier, forward biased, reverse biased, forward characteristics of PN junction diode.
MCQs on PN Junction diode: 1 to 5
1 The conduction of current in the intrinsic semiconductor is due to
( a )Free electrons
( b )Holes
( c )Both (a) and (b)
( d )None of the above
Correct Answer (c): Both (a) and (b)
2 The process of adding impurity to semiconductor material is called
( a )Doping
( b )Electron volt
( c )Bonding
( d )Alloying
Correct Answer (a): Doping
3 How many atoms of semiconductor required to produce imparity of one atom?
( a )1 × 1048
( b )1 × 1016
( c )1 × 108
( d )1 × 106
Correct Answer (c): 1 × 108
4 What is main reason for adding impurity in the semiconductor material?
( a )Increase free electrons
( b )Increase holes
( c )Both (a) and (b)
( d )None of the above
Correct Answer (c): Both (a) and (b)
5 When trivalent impurity is added to pure semiconductor, large number of______ are created.
( a )Free electrons
( b )Holes
( c )Both (a) and (b)
( d )None of the above
Correct Answer (a): Free electrons
MCQs on PN Junction diode: 1 to 5
6 When pentavalent impurity is added to pure semiconductor, it is known as
( a )N – type conductor
( b )P – type conductor
( c )P – type semiconductor
( d )N – type semiconductor
Correct Answer (d): N – type semiconductor
7 Which of the following is not a donor type impurity?
( a )Indium
( b )Arsenic
( c )Antimony
( d )All of the above
Correct Answer (a): Indium
8 The minority charge carriers in the P type semiconductor material is
( a )Electrons
( b )Holes
( c )Both (a) and (b)
( d )None of the above
Correct Answer (a): Electrons
9 Which of the this semiconductor is electrically neutral?
( a )P-type semiconductor
( b )N-type semiconductor
( c )Both (a) and (b)
( d )None of the above
Correct Answer (c): Both (a) and (b)
10 The PN junction is formed by
( a )Soldering
( b )Welding
( c )Alloying
( d )Any of the above
Correct Answer (c): Alloying
MCQs on PN Junction diode: 11 to 15
11 The process of free electrons of n – side diffuse to p – side and holes of p – side to n – side in the semiconductor material is known as
( a )Alloying
( b )Diffusion
( c )Doping
( d )Soldering
Correct Answer (b): Diffusion
12 The potential barrier of the PN junction diode produce _____ field.
( a )Magnetic
( b )Electro static
( c )Electric
( d )All of the above
Correct Answer (c): Electric
13 The potential barrier of the forward bias PN junction is in the order of
( a )0.1 to 0.3 V
( b )1.0 to 5.0 V
( c )10 V
( d )100 V
Correct Answer (a): 0.1 to 0.3 V
14 Which of the following will cancel potential barriers completely in the PN junction diode?
( a )Forward bias
( b )Reverse bias
( c )External bias
( d )None of the above
Correct Answer (a): Forward bias
15 The forward bias resistance of the PN junction is
( a )Low
( b )Very low
( c )High
( d )Very high
Correct Answer (b): Very low
MCQs on PN Junction diode: 16 to 20
16 When a free electron combines with a hole, it becomes a
( a )Free electron
( b )Valance electron
( c )Covalent bond
( d )None of the above
Correct Answer (b): Valance electron
17 The potential barrier of the silicon type PN junction diode is
( a )0.3 V
( b )0.7 V
( c )1.0 V
( d )2.75 V
Correct Answer (b): 0.7 V
18 The potential barrier of the germanium type PN junction diode is
( a )0.3 V
( b )0.7 V
( c )1.0 V
( d )1.8 V
Correct Answer (a): 0.3 V
19 The forward characteristics of the PN junction diode is
( a )Linear
( b )Non – linear
( c )Parabola
( d )Hyperbola
Correct Answer (b): Non – linear
20 When the applied voltage exceeds potential barrier of the PN junction diode, the PN junction behaves like a
( a )Conductor
( b )Semiconductor
( c )Insulator
( d )Either (b) or (c)
Correct Answer (a): Conductor
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